Samsung M470T2864EH3-CF7 memory module 1 GB 1 x 1 GB DDR2 800 MHz

SKU
M470T2864EH3-CF7
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In stock
1GB DDR2, 800 MHz, CL6, 1.8V
EAN 4051154093062
Specification
Power
Memory voltage1.8 V
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 1 GB
Internal memory1 GB
Component forLaptop
Memory form factor200-pin SO-DIMM
CAS latency6
Memory voltage1.8 V
Memory ranking2
ECCNo
Memory clock speed800 MHz
Internal memory typeDDR2
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 1 GB
Internal memory1 GB
Component forLaptop
Memory form factor200-pin SO-DIMM
CAS latency6
Memory voltage1.8 V
Memory ranking2
ECCNo
Memory clock speed800 MHz
Internal memory typeDDR2
Manufacturer Samsung
In Stock Y
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