Samsung 990 PRO M.2 2 TB PCI Express 4.0 V-NAND MLC NVMe

SKU
MZ-V9P2T0B/AM
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In stock
2 TB, M.2, PCIe Gen 4.0 x4, NVMe 2.0, V-NAND MLC
Our ultimate SSD
Reach max performance with PCIe® 4.0.
Experience longer-lasting, opponent-blasting speed.
The in-house controller's smart heat control delivers supreme power efficiency while maintaining ferocious performance that always keeps you at the top of your game.

Maximized PCIe® 4.0 speed
Huge speed boost.

Get random read/write speeds that are 40%/55% faster than 980 PRO. Experience up to 1400K/1550K IOPS, while sequential read/write speeds up to 7450/6900 MB/s reach near the max performance of PCIe® 4.0. Fly high in gaming, video editing, 3D modeling, data analysis and more.

Breakthrough power efficiency
More power-efficient performance.

Use less power and get more performance. Enjoy up to 50% improved performance per watt over 980 PRO, plus optimal power efficiency with max PCIe® 4.0 performance.

Smart thermal control
Samsung's own nickel-coated high-end controller delivers effective thermal control and prevents sudden performance drops from overheating.

The champion maker
A more than 55% improvement in random performance enables faster loads for an ultimate gaming experience on PS5 and DirectStorage PC games.

Samsung Magician software
Unlock the full potential of 990 PRO.

Samsung's own nickel-coated high-end controller delivers effective thermal control and prevents sudden performance drops from overheating.

World's no. 1 flash memory brand
Experience the performance and reliability that you can only get from the world's number one brand for flash memory since 2003. All firmware and components, including Samsung's world-renowned DRAM and NAND, are produced in-house, allowing end-to-end integration for quality you can trust.
EAN 0887276657011
Specification
Hard drive
PCI Express interface data lanesx4
SSD capacity2 TB
Memory typeV-NAND MLC
Data transmission
Read speed7450 MB/s
Write speed6900 MB/s
Random write (4KB)1550000 IOPS
Random read (4KB)1400000 IOPS
Security
Security algorithms256-bit AES
Endurance
Mean time between failures (MTBF)1500000 h
Performance
InterfacePCI Express 4.0
Component forPC
NVMeYes
NVMe version2.0
DevSlp (device sleep) supportYes
TBW rating1200
PCI Express interface data lanesx4
SSD capacity2 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7450 MB/s
TRIM supportYes
Write speed6900 MB/s
Memory typeV-NAND MLC
Random write (4KB)1550000 IOPS
Random read (4KB)1400000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
Design
Component forPC
SSD form factorM.2
Features
InterfacePCI Express 4.0
Component forPC
NVMeYes
NVMe version2.0
DevSlp (device sleep) supportYes
TBW rating1200
PCI Express interface data lanesx4
SSD capacity2 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7450 MB/s
TRIM supportYes
Write speed6900 MB/s
Memory typeV-NAND MLC
Random write (4KB)1550000 IOPS
Random read (4KB)1400000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
SSD form factorM.2
External DDR cacheYes
External DDR cache quantity2048 MB
M.2 SSD size2280 (22 x 80 mm)
Power
Power consumption (average)5.5 W
Power consumption (idle)0.055 W
Operating voltage3.3 V
Operational conditions
Operating temperature (T-T)0 - 70 °C
Operating shock1500 G
Maximum operating temperature70 °C
Technical details
InterfacePCI Express 4.0
S.M.A.R.T. supportYes
Operating temperature (T-T)0 - 70 °C
TRIM supportYes
Operating shock1500 G
Hardware encryptionYes
SSD form factorM.2
Weight & dimensions
Package typeBox
Width80 mm
Weight9 g
Height22 mm
Depth2.3 mm
Packaging data
Package typeBox
Manufacturer Samsung
In Stock Y
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